| PART |
Description |
Maker |
| IC61SF25636T IC61SF25636D IC61SF25632T IC61SF25632 |
SYNCHRONOUS STATIC RAM, Flow Through
From old datasheet system
8Mb SyncBurst Flow through SRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| 17570 17570-5 |
HTSNK. A X-FLOW. .911 LOW FLOW. THRU HOLE
|
VICOR[Vicor Corporation]
|
| IDTQS3VH2861 IDTQS3VH2861Q IDTQS3VH2861QG |
QUICKSWITCH? PRODUCTS 2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH
QUICKSWITCH㈢ PRODUCTS 2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH SWITCH
|
Integrated Device Technology
|
| IDTQS32X861Q1G IDTQS32X861Q1 IDTQS32X861 |
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT CBT/FST/QS/5C/B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48
QUICKSWITCH PRODUCTS HIGH-SPEED CMOS 20-BIT BUS SWITCH WITH FLOW-THRU PINOUT
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| 9CRA0612P6K001 9CRA0612P6G001 9CRA0612P6J001 |
High Air Flow and High Static Pressure
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| CY7C1297H-133AXC |
1-Mbit (64K x 18) Flow-Through Sync SRAM; Architecture: Standard Sync, Flow-through; Density: 1 Mb; Organization: 64Kb x 18; Vcc (V): 3.1 to 3.6 V
|
CYPRESS SEMICONDUCTOR CORP
|
| T6THSHD121EEA T6THSHD241EEA T6SHSLD121EEA T6THSLD1 |
High flow, compact diaphragm pumps
|
Sensortechnics GmbH
|
| IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through
64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| QS3VH861QG |
QUICKSWITCH? PRODUCTS 2.5V / 3.3V 10-BIT FLOW-THROUGH PIN OUT, HIGH BANDWIDTH BUS SWITCH
|
Integrated Device Technolog...
|
| AS7C251MFT32_36A AS7C251MFT32A AS7C251MFT32A-10TQC |
2.5V 1M x 32/36 Flow-through synchronous SRAM
Sync SRAM - 2.5V
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SO -55 to 125
DIODE ZENER SINGLE 1000mW 20Vz 12.5mA-Izt 0.05 5uA-Ir 15.2Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 30Vz 8.5mA-Izt 0.05 5uA-Ir 22.8Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 39Vz 6.5mA-Izt 0.05 5uA-Ir 29.7Vr DO41-GLASS 5K/REEL
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SOIC -55 to 125 1M X 32 STANDARD SRAM, 7.5 ns, PQFP100
2.5V 1M x 32/36 Flow-through synchronous SRAM 1M X 32 STANDARD SRAM, 7.5 ns, PQFP100
2.5V 1M x 32/36 Flow-through synchronous SRAM 1M X 32 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 1M x 32/36 Flow-through synchronous SRAM 1M X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 1M x 32/36 Flow-through synchronous SRAM 1M X 36 STANDARD SRAM, 10 ns, PQFP100
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Set and Reset 16-TSSOP -55 to 125 2.5V00万x 32/36流通过同步SRAM
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构）)
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，15纳秒，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，12ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏，纳秒，同同步脉冲静态内存模块（流通结构）
SSRAM Modules 的SSRAM模块
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构）) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏，8.5ns，同同步脉冲静态内存模块（流通结构）
2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
